Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature

We present the detailed analyses of magneto-conductivities in a Weyl semimetal within Born and self-consistent Born approximations. In the presence of the charged impurities, the linear magnetoresistance can happen when the charge carriers are mainly from the zeroth (n=0) Landau level. Interestingly, the linear magnetoresistance is very robust against the change of temperature, as long as the charge carriers mainly come from the zeroth Landau level. We denote this parameter regime as the high-field regime. On the other hand, the linear magnetoresistance disappears once the charge carriers from the higher Landau levels can provide notable contributions. Our analysis indicates that the deviation from the linear magnetoresistance is mainly due to the deviation of the longitudinal conductivity from the $1/B$ behavior. We found two important features of the self-energy approximation: 1. a dramatic jump of $\sigma_{xx}$, when the $n=1$ Landau level begins to contribute charge carriers, which is the beginning point of the middle-field regime, when decreasing the external magnetic field from high field; 2. In the low-field regime $\sigma_{xx}$ shows a $B^{-5/3}$ behavior and results the magnetoresistance $\rho_{xx}$ to show a $B^{1/3}$ behavior. The detailed and careful numerical calculation indicates that the self-energy approximation (including both the Born and the self-consistent Born approximations) does not explain the recent experimental observation of linear magnetoresistance in Weyl semimetals.Comment: The accepted version. Extending the previous version by including the discussions of self-consistent Born approximatio

An empirical evaluation of four variants of a universal species-area relationship

The Maximum Entropy Theory of Ecology (METE) predicts a universal species-area relationship (SAR) that can be fully characterized using only the total abundance (N) and species richness (S) at a single spatial scale. This theory has shown promise for characterizing scale dependence in the SAR. However, there are currently four different approaches to applying METE to predict the SAR and it is unclear which approach should be used due to a lack of empirical evaluation. Specifically, METE can be applied recursively or a non-recursively and can use either a theoretical or observed species-abundance distribution (SAD). We compared the four different combinations of approaches using empirical data from 16 datasets containing over 1000 species and 300,000 individual trees and herbs. In general, METE accurately downscaled the SAR (R^2> 0.94), but the recursive approach consistently under-predicted richness, and METEs accuracy did not depend strongly on using the observed or predicted SAD. This suggests that best approach to scaling diversity using METE is to use a combination of non-recursive scaling and the theoretical abundance distribution, which allows predictions to be made across a broad range of spatial scales with only knowledge of the species richness and total abundance at a single scale.Comment: main text: 20 pages, 2 tables, 3 figure

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures

Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking theoretical results and available experimental evidence, we show that thermal oxidation generates carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures

A geometric and structural approach to the analysis and design of biological circuit dynamics: a theory tailored for synthetic biology

Much of the progress in developing our ability to successfully design genetic circuits with predictable dynamics has followed the strategy of molding biological systems to fit into conceptual frameworks used in other disciplines, most notably the engineering sciences. Because biological systems have fundamental differences from systems in these other disciplines, this approach is challenging and the insights obtained from such analyses are often not framed in a biologically-intuitive way. Here, we present a new theoretical framework for analyzing the dynamics of genetic circuits that is tailored towards the unique properties associated with biological systems and experiments. Our framework approximates a complex circuit as a set of simpler circuits, which the system can transition between by saturating its various internal components. These approximations are connected to the intrinsic structure of the system, so this representation allows the analysis of dynamics which emerge solely from the system's structure. Using our framework, we analyze the presence of structural bistability in a leaky autoactivation motif and the presence of structural oscillations in the Repressilator